Researchers Achieve Electrical Switching of Altermagnetism Breakthrough

Scientists at the Southern University of Science and Technology (SUSTech) in China, along with colleagues from Peking University, have made significant strides in the field of magnetism. Led by Prof. Haizhou Lu and Prof. X. C. Xie, their research has successfully demonstrated the electrical switching of a newly discovered form of magnetism called altermagnetism. This breakthrough, published in Physical Review Letters on July 15, 2025, could revolutionize data storage technologies by enabling the manipulation of magnetic properties using only electricity.

The ability to switch magnetism using electrical currents presents vast potential for innovative applications in data storage devices, such as hard drives and other magnetic memory technologies. Historically, achieving this goal has been challenging. Yiyuan Chen, the first author of the study, emphasized the importance of this research, stating, “Manipulating magnetism using only electricity is a long-standing challenge because of its great significance for industrial applications, such as high capacity and low-consumption storage.”

Altermagnetism, first identified in 2022, is characterized by a zero net magnetization and unique symmetry properties that influence electron behavior. Given the difficulties associated with switching traditional forms of magnetism, Chen and his team shifted their focus to altermagnetism. They identified bilayer manganese telluride (MnTe) as a suitable candidate for their experiments. This specific material naturally breaks parity symmetry—a crucial requirement for switching magnetic configurations.

To explore the electrical switching capabilities of bilayer MnTe, the researchers utilized a combination of analytical techniques, computational physics, and computer simulations. Their findings indicate that this material could serve as a viable platform for switching magnetism without relying on external magnetic fields. Chen elaborated, “We use symmetry analysis, first-principles calculations, and magnetic dynamics simulations with the Landau-Lifshitz-Gilbert equation. Our work pioneers the pure electric switching of altermagnetism, thus opening a new avenue for information storage devices.”

The implications of this research are significant and could lead to further investigations into the electrical switching of altermagnetism in MnTe bilayer devices. This advancement could eventually facilitate the development of new data storage solutions that are both efficient and environmentally friendly. As Chen notes, “We now aim to apply our theory to more unconventional magnetisms to achieve their deterministic switching. We are also looking for more readable signals of unconventional magnetism to further promote their application in electronic devices.”

The ongoing research holds promise not only for enhancing data storage technologies but also for inspiring future explorations into unconventional magnetism. As researchers continue to investigate these materials, the potential for new applications in electronics could transform how data is stored and accessed in the coming years.